Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.     

升级EAST快控电源控制器研制

针对EAST快控电源缩短电流响应时间的要求,升级的快控电源控制器采用TMS320F28335替代原快控电源支路控制器中的TMS320F2812,实现响应和输出脉冲宽度调节(PWM)控制上的载波相移,提高系统等效开关频率,减小输出电压响应延时。经过实验验证,升级的快控电源控制器实现预定目标,有助于提升EAST装置抑制等离子体垂直位移不稳定性的能力。     

Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition

We studied the effect of gas flow ratio of the H₂ carrier gas to the NH₃ precursor on the physical and crystal properties of GaN. GaN was grown by vertical reactor metalorganic chemical vapour deposition (MOCVD) on a low-temperature-deposited GaN buffer layer. A (0 0 0 1) sapphire substrate was used. The impact of the gas flow ratio as it was varied from 0.25 to 1 was investigated and discussed. With increase in flow ratio, the concentrations of magnesium and carbon impurities in GaN increased. The flow ratio of 0.5 is the optimum value to minimise the background electron concentration and to maintain crystal quality. The decrease in the background electron concentration is due to the compensation mechanism of acceptor-like magnesium and carbon impurities.     

Experimental verification of the existence of optically induced carrier pulsations in SOAs

Experimental investigation of the role of interband effects in four-wave mixing (FWM) in semiconductor optical amplifiers (SOAs) is reported. Carrier density pulsations (CDP) in SOAs, caused by optical wave beating, are measured in the RF domain. This gives strong experimental confirmation of the link between CDP and wave mixing, as usually assumed in theory of FWM in SOAs. The dependence of CDP amplitude on bias current and optical power is also established.     

Temperature dependent carrier induced ferromagnetism in Zn(Fe)O and Zn(FeAl)O thin films

Epitaxial films of ZnO doped with magnetic ion Fe and, in some cases, with 1% Al show clear evidence of room temperature ferromagnetic ordering but containing huge amount of paramagnetic moment in it. The total ferromagnetic and paramagnetic contributions have been extracted from the low temperature SQUID measurements. A clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers and number of donors have been found in these films and established the theory of carrier induced ferromagnetism. The experimental data has been best explained through the modification of electronic structure of oxide semiconductors with impurity states.     

Polar decomposition in e-rings

An e-ring is a generalization of the ring of bounded linear operators on a Hilbert space together with the subset consisting of all effect operators on that space. Associated with an e-ring is a partially ordered abelian group, called its directed group, that generalizes the additive group of bounded Hermitian operators on the Hilbert space. We prove that every element of the directed group of an e-ring has a polar decomposition if and only if every element has a carrier projection and is split by a projection into a positive and a negative part.     

Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of opto-electronic compounds. The purpose of this work is to investigate these effects by mirage effect technique and spectroscopic ellipsometry SE.

The near gap optical spectra are obtained from photothermal signal for differently doped Si and GaAs bulk samples. However, the above bandgap absorption is determined from SE. These spectra show that absorption in the near IR increases with dopant density and also the bandgap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon-assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density through a semi-empirical model.

We have also used the photothermal signal phase to measure the influence of doping on thermal diffusivity.     

Nitrogen-Bearing Organic Compounds as Carriers for Lead Ion-Selective Electrodes with Excellent Response

Bis-Schiff base, pyridyl carboxamide, acylhydroxylamine, and phenylhydrazone, acting as sensing agents in ionophore-doped membranes of lead-ion selective electrodes with excellent response characteristics, are systematically summarized according to the latest literatures and our latest researches. The relationship between the response characteristics of the lead (II) ion-selective electrode assembled by the carriers and their molecular structures is also elaborated. It is noteworthy that the selectivity of the electrode towards lead ions over other cations is closely related to the molecular structure of the carrier. The presence of cyano group would largely improve the lower detection limit whether it is introduced into the carrier or membrane matrix. The sensing mechanism should be emphasized in order to find out the direction for developing high performance carriers.     

新型肼桥联共价三嗪聚合物在二氧化碳捕集和催化转化方面的应用（英文）

二氧化碳的捕集和催化转化是近年来二氧化碳利用方面的研究热点.其原因,一方面二氧化碳是储量丰富、廉价易得的可再生碳资源,另一方面它又是带来环境问题的温室气体.以金属有机框架、沸石和多孔聚合物材料为代表的同时具有规则孔道和活性催化位点的双功能材料为实践这一新概念创造了条件.但是,金属有机框架和沸石的应用面临由其自身结构所带来的热稳定性和/或水稳定性较低等问题.多孔聚合物材料则由于其高稳定性、低密度以及非金属等优点,逐渐成为该领域的研究重点.然而,当前关于利用多孔聚合物类材料作为有机催化剂以实现二氧化碳固定的报道,其反应过程一般需要较高温度、有机溶剂和/或过渡金属催化组分,仍有较大改进余地.本文设计合成了新型肼桥联共价三嗪聚合物(HB-CTP),意图在利用其富氮三嗪结构单元促进二氧化碳捕集的同时,以大量肼官能团通过氢键作用活化环氧化物,进而将二氧化碳在无溶剂和非金属的温和条件下催化固定为环状碳酸酯.HB-CTP材料的合成方法简便易行,由2,4,6-三肼基-1,3,5-三嗪与三聚氯氰发生的亲核取代反应制得.采用多种表征手段分析了该类新材料的结构和形态:红外光谱表明三聚氯氰的C–Cl键在聚合过程中反应完全,其位于850 cm.1处的吸收信号彻底消失;固体核磁谱图仅在168.1 ppm处显示三嗪环的单峰信号,表明了该材料结构的完整性;X射线粉末衍射测试并未发现特征峰,表明HB-CTP呈无定形态;透射电镜和扫描电镜的观测结果则进一步证实了该材料的团聚形态;最后,热重分析显示HB-CTP具有良好的热稳定性,250 ℃以上才开始分解.然后,通过氮气吸附测定了HB-CTP比表面积(51.2 m~2/g)和总孔容(0.28 cm3/g),其吸附等温线呈Ⅱ型,表明材料结构以大孔为主,通过层间吸附.随后的二氧化碳吸附测试发现,HB-CTP在0°C、0.1 MPa条件下显示出较高的二氧化碳捕集容量(8.2 wt%),并且经过连续吸附脱附循环五次,仍能保持较好的二氧化碳捕集能力.在HB-CTP材料良好的二氧化碳捕集容量基础上,本文考察了其催化活性,发现带有多种取代基的环氧化物均能在无溶剂、非金属的温和条件下,以较高的收率被转化为环状碳酸酯类产物;并且底物结构中的卤素、羟基、炔基、烯丙基和苄基等官能团均未发生副反应,显示出良好的底物适用范围.此外,HB-CTP材料可通过简单的离心操作实现分离回收,且经连续使用五次,其催化活性也没有明显降低.综上所述,该类新型肼桥联共价三嗪聚合物不仅能够高效捕集二氧化碳,而且还可以将其在温和条件下催化转化为环状碳酸酯类产物,具有一定理论研究意义和实际应用价值